Skip to content

High Efficiency III-Nitride Devices with Smooth Relaxed InGaN Buffer and Strain Compliant Template

Improved efficiency of red InGaN emitters by growing smooth buffer layers on mechanically flexible strain compliant templates (SCTs)

Published: 6th January 2022
High Efficiency III-Nitride Devices with Smooth Relaxed InGaN Buffer and Strain Compliant Template
Source: Taranukhin Alex, https://stock.adobe.com/uk/ 296105252, stock.adobe.com
Patents
  • Patent Pending
IP Status
  • Patent application submitted
Seeking
  • Licensing